TSM6025 page 1 ? 2011 touchstone semiconductor, inc. all rights reserved. features ? alternate source for max6025 ? initial accuracy: 0.2% (max) C TSM6025a 0.4% (max) C TSM6025b ? temperature coefficient: 15 ppm/c (max) C TSM6025a 25 ppm /c (max) C TSM6025b ? quiescent supply current: 35 a (max) ? low supply current change with v in : <1 a/v ? outpu t source/ sink current: 500 a ? low drop out at 500a load current: 100 mv ? load regulation : 0.14 v/a ? line regulation : 25 v/v ? stable with c load up to 2200p f applications industrial and process - control systems hard - disk drives battery - operated e quipment data acquisition systems hand - held equipment precision 3v/5v systems smart industrial transmitters description the TSM6025 is a 3 - terminal, series - mode 2.5 - v precision voltage reference and is a pin - for - pin, alternate source for the max6025 voltag e reference. like the max6025, the TSM6025 consumes only 27a of supply current at no - load, exhibits an initial output voltage accuracy of less than 0.2%, and a low output voltage temperature coefficient of 15ppm/c. in addition, the TSM6025s output stage is stable for all capacitive loads to 2200pf and is capa ble of sinking and sourcing load currents up to 500a. since the TSM6025 is a series - mode voltage reference, its supply current is not affected by changes in the applied supply voltage unlike two - terminal shunt - mode references that require an external res istor. the TSM6025s small form factor and low supply current operation combine to make it an ideal choice in low - power, precision applications. the TSM6025 is fully specified over the - 40c to +85c temperature range and is available in a 3 - pin sot23 pac kage. a +2.5v, low - power/low - dropout p recision voltage reference typical appli cation circuit the touchstone semicondu c tor logo is a registered trademark of touchstone semiconductor, incorporated. temperature drift - c output voltage - volt - 40 - 15 10 35 85 60 2.4995 2.4985 three typical devices device #1 device #2 device #3 2.5025 2.5015 2.5005 2.5035 output voltage temperature drift www.datasheet.co.kr datasheet pdf - http://www..net/
ts m6025 page 2 TSM6025ds r1p0 rtfds absolute maximum rat ings in to gnd ................................ ............................... - 0.3v to +13.5v out to gnd ................................ ................................ .. - 0.3v to 7v short circuit to gnd or in (v in < 6v ) ............................. continuous output short circuit to gnd or in (v in 6v) .............................. 60s continuous power dissipation (t a = +70c) 3 - pin sot23 ( d erate at 4.0mw/c above +70c) ......... 320mw operating temperature range ................................ - 40c to +85c storage temperature range ................................ . - 65c to +150c lead temperature (s oldering, 10s) ................................ ..... +300c electrical and thermal s tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime . package/ordering information order number part marking carrier quantity TSM6025aeur+ acx tape & reel ----- TSM6025aeur+t tape & reel 3000 TSM6025beur+ acy tape & reel ----- TSM6025beur+t tape & reel 3000 lead - free program: touchstone semico nductor supplies only lead - free packaging. consult touchstone semiconductor for products specified with wider operating temperature ranges. www.datasheet.co.kr datasheet pdf - http://www..net/
TSM6025 TSM6025ds r1p0 page 3 rtfds electrical character istics v in = +5v, i out = 0, t a = t min to t max , unless otherwise noted. typical values are at t a = +25c. see note 1 . parameter symbol conditions min typ max units output output voltage v ou t t a = +25 c TSM6025 a 2.495 2.500 2.505 v - 0.20 0.20 % TSM6025 b 2.490 2.500 2.510 v - 0.40 0.40 % output voltage t emperature coefficient (see note 2) v out t a = 0c to +70 c TSM6025 a 6 1 5 ppm/c t a = - 40c to +85 c 6 20 t a = 0c to +70 c TSM6025 b 6 25 t a = - 40c to +85 c 6 30 line regulation v out / v in (v out + 0.2v) v in 12.6v 140 v/v load regulation v out / i out sourcing: 0 i out 500 a 0.14 0.60 v/a sinking: - 500a i out 0 0.18 0.80 dropout voltage (see note 5) v in - v out i out = 500 a 100 200 mv out short - circuit curre nt i sc v out short to gnd 4 ma v out short to in 4 temperature hys teresis ( see note 3) 130 ppm long - term stability v out / time 1 68 hr at t a = +25 c 50 ppm/ 168 hr dynamic noise voltage e out f = 0.1hz to 10hz 50 v p - p f = 10hz to 1 0khz 125 v rms ripple rejection v out / v in v in = 5v 100mv, f = 120hz 82 db capacitive - load stability range c out see note 4 0 2.2 nf input supply voltage range v in gua ranteed by line - regulation test v out + 0.2 12.6 v quiescent supply curr ent i in 27 35 a change in supply current i in /v in (v out + 0.2v) v in 12.6v 2.0 a/v note 1: all devices are 100% production tested at t a = +25c and are guaranteed by characterization for t a = t min to t max , as specified. note 2: temperature co efficient is measured by the box method; i.e., the maximum v out is divided by the maximum t . note 3: temperature h ysteresis is defined as the change in the +25c output voltage before and after cycling the device from t min to t max . note 4: not producti on tested; g uaranteed by design. note 5: dropout voltage is the minimum input voltage at which v out changes 0.2% from v out at v in = 5.0v. www.datasheet.co.kr datasheet pdf - http://www..net/
ts m6025 page 4 TSM6025ds r1p0 rtfds line regulation C v out / v in output voltage change - v supply voltage - volt - 100 0 200 300 t a = - 40 c t a = +8 5c 100 temperature drift - c load current - a t a = +85 c load regulation C v out / i load - 500 500 250 - 250 - 0.4 - 0.2 0.4 0 0.2 source current - a dropout voltage - volt dropout voltage vs source current 400 800 0 1000 600 200 0 0.1 0.4 0.2 0.3 power supply rejection vs frequency power supply rejection C mv/v frequency - hz v cc =+5.5v 0.25v 1 10 0.01 100 100 1k 10k 1m 100k time - hours output voltage change - m v 0 t a = +25c t a = +8 5c t a = - 40 c 8 12 2 14 10 4 6 t a = - 40 c typical performance characteristics v in = +5v; i o ut = 0m a ; t a = +25 c, unless otherwise noted. t a = +2 5c t a = +25 c three typical devices device #1 0 42 84 168 126 2.498 2.500 2.499 2.502 2 .501 output voltage - volt device #2 device #3 long - term output voltage drift output voltage - volt - 40 - 15 10 35 85 60 2.4995 2.4985 three typical devices device #1 device #2 device #3 2.5025 2.5015 2.5005 2.5035 output voltage temperature drift 0.1 www.datasheet.co.kr datasheet pdf - http://www..net/
TSM6025 TSM6025ds r1p0 page 5 rtfds supply current vs input voltage 0.1hz to 10hz output noise v out(n) 10 v/div output impedance - ? frequency - hz 1 10 1k 0.1 100 10k 0.1 1 100 1m 10k 1s/div 200 s/div power - on transient response input 2v/div 10 s/div small - signal load transient response i out 50 a/div supply curent - a input voltage - volt 20 28 36 40 8 12 2 14 32 10 supply current vs temperature temperature - c supply curent - a v cc = +2.5v, +5.5v v cc =+12.5v - 40 - 15 10 35 85 60 25 35 20 30 40 output impedance vs frequency output 1v/div output 20mv/div i out = 0 a 50 a 0 a 46 vpp v cc =+7.5v 4 6 24 typical performance characteristics v in = +5v; i o ut = 0m a ; t a = +25 c, unless otherwi se noted. www.datasheet.co.kr datasheet pdf - http://www..net/
ts m6025 page 6 TSM6025ds r1p0 rtfds v in 200m v/div output 100mv/div line transient response typical performance characteristics v in = +5v; i o ut = 0m a ; t a = +25 c, unless otherwise noted. 2 s/div 10 s/div i out 1m a/div output 200mv/div v in =5v 0.25v, ac - coupled large - signal load transient response i out = 0ma 1ma 0ma www.datasheet.co.kr datasheet pdf - http://www..net/
TSM6025 TSM6025ds r1p0 page 7 rtfds pin functions pin name function 1 in supply voltage input 2 out +2.5v output 3 gn d ground description/ theory of operation the TSM6025 incorporates a precision 1.25 - v bandgap reference that is followed by a output amplifier configured to amplify the base bandgap output voltage to a 2.5 - v output. the design of the bandgap reference i ncorporates proprietary circuit design techniques to achieve its low temperature coefficient of 15 ppm/c and initial output voltage accuracy less than 0.2%. the design of the output amplifiers frequency compensation does not require a separate compensatio n capacitor and is stable with capacitive loads up to 2200pf. the design of the output amplifier also incorporates low headroom design as it can source and sink load currents to 500a with a dropout voltage less than 200mv. applications informa tion power supply input capacitive bypass as shown in the typical application circuit, the v in pin of the TSM6025 should be bypassed to gnd with a 0.1uf ceramic capacitor for optimal line - transient performance. consistent with good analog circuit engineering practice, the capacitor should be placed in as close proximity to the TSM6025 as practical with very short pcb track lengths. output/load capacitance considerations as mentioned previously, the TSM6025 do es not require a separate, external capacit or at v out for transient response stability as it is stable for capacitive loads up to 22 00pf . on the other hand and for improved large - signal line and load regulation, the use of a capa citor at v out will provide a reservoir of charge in reserve to absorb large - signal load or line transients. this in turn improves the TSM6025s v out sett l ing time. if large load and line transients are not expected in the application, then the TSM6025 can be used without an external capacitor at v out thereby reducing the overall circuit footprint. supply current the TSM6025 exhibits excellent dc line regulation as its supply current changes slightly as the applied supply voltage is increased. while its su pply current is 35a maximum, the change in its supply current as a function of supply voltage (its i in /v in ) is less than 1a/v. since the TSM6025 is a series - mode reference, load current is drawn from the supply voltage only when required. in this case, circuit efficiency is maintained at all applied supply voltages. reducing power dissipation and extending battery life are the net benefits of improved circuit efficiency. on the other hand, an external resistor in series with the supply voltage is requi red by two - terminal, shunt - mode references . in this case, as the supply voltage changes, so does the quiescent supply current of the shunt reference. in addition, the external resistors tolerance and temperature coefficient contribute two additional facto rs that can affect the circuits supply current. therefore, maximizing circuit efficiency with shunt - mode references becomes an exercise involving three variables. additionally, shunt - mode references must be biased at the maximum expected load current even if the load current is not present at all times. when the applied supply voltage is less than the minimum specified input voltage of the TSM6025 ( for example, during the power - up transition ), the TSM6025 can draw up to 200 a above its nominal , steady - sta te supply current. to ensure reliable power - up behavior, the input power source must have sufficient reserve power to provide the extra supply current drawn during the power - up transition. www.datasheet.co.kr datasheet pdf - http://www..net/
ts m6025 page 8 TSM6025ds r1p0 rtfds output voltage hysteresis reference output voltage thermal hys teresis is the change in the references +25c output voltage after temperature cycling from +85 c to +25 c and from - 40 c to +25 c. thermal h ysteresis is caused by differential package stress impressed upon the TSM6025s internal bandgap core transistors and depends on whether the reference ic was previously at a higher or lower temperature . at 130ppm, t he TSM6025s typical temperature hysteresis is equal to 0.33mv with respect to a 2.5v output voltage . voltage reference turn - on time with a (v in C v out ) voltage differential larger than 200mv and i load = 0ma, the TSM6025s typical combined turn - on and settling time to within 0.1% of its 2.5v final value is approximately 3 4 0 s . a positive and negative low - power voltage reference the circuit in figure 1 uses a cd4049 hex inverter and a few external capacitors as the power supply to a dual - supply precision op amp to form a 2.5v precision, bipolar output voltage reference a round the TSM6025. the cd4049 - based circuit is a discrete charge pump voltage do ubler/inverter that generates 6 v supplies for any industry - standard op - 07 or equivalent precision op amp. figure 1 : positive and negative 2.5v references from a single +3v or +5v supply www.datasheet.co.kr datasheet pdf - http://www..net/
TSM6025 touchstone semiconductor, inc. page 9 630 alder drive, milpitas, c a 95035 TSM6025ds r1p0 +1 (408) 215 - 1220 ? www.touchstonesemi.com rtfds package outline draw ing 3 - pin sot23 package outline drawing (n.b., drawings are not to scale) information furnished by touchstone semiconductor is believed to be accurate and reliable. however, touchstone semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use , and all information provided by touchstone semiconductor and its suppliers is provided on an as is basis, without warranty of any kin d . touchstone semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. no license is granted by implication or otherwise under any patent or patent rights of touchstone semiconductor. touchstone semiconductor assumes no liability for applications assistance or customer product design. customers are responsible for thei r products and applications using touchstone semiconductor components. to minimize the risk associated with customer pr oducts and applications, customers should provide adequate design and operating safeguards. trademarks and registered trademarks are the property of t heir respective owners. 1 . 0 3 m a x 0 . 8 9 m i n 3 . 0 4 m a x 2 . 8 0 m i n 1 . 1 2 m a x 0 . 8 9 m i n 0 . 1 0 0 m a x 0 . 0 1 3 m i n 0 . 3 m i n 0 . 5 m a x 2 . 6 4 m a x 2 . 1 0 m i n 0 . 9 4 m a x 0 . 8 8 m i n 0 . 5 4 m a x 0 . 4 8 m i n 1 . 4 0 m a x 1 . 2 0 m i n 0 . 2 0 m a x 0 . 0 8 m i n 0 . 6 8 5 m a x 0 . 4 0 6 m i n 0 . 2 5 0 . 4 1 m a x 0 . 2 1 m i n 0 ' C 8 ' 2 1 1 d o e s n o t i n c l u d e m o d e f l a s h , p r o t r u s i o n s o r g a t e b u r n s . m o d e f l a s h , p r o t r u s i o n s o r g a t e b u r n s s h a l l n o t e x c e e d 0 . 1 2 7 m m p e r s i d e 2 d o e s n o t i n c l u d e i n t e r - l e a d f l a s h o r p r o t r u s i o n s . i n t e r - l e a d f l a s h a n d p r o t r u s i o n s s h a l l n o t e x c e e d 0 . 1 2 7 m m p e r s i d e . 3 . d i e i s f a c i n g u p f o r m o l d d i e a n d t r i m - f o r m . 4 . l e a d s p a n / s t a n d o f h i g h / c o p l a n a r i t y a r e c o n s i d e r e d a s s p e c i a l c h a r a c t e r i s t i c . 5 . a l l s p e c i f i c a t i o n s r e f e r d j e d e c t o - 2 3 6 a b e x c e p t f o r l e a d l e n g t h d i m e n s i o n . 6 . c o n t r o l l i n g d i m e n s i o n i n ( m m ) 0 . 1 0 m a x n o t e : 0 . 1 6 m a x 0 . 0 8 m i n 0 . 2 0 m a x 0 . 0 8 m i n 0 . 5 0 m a x 0 . 3 0 m i n 0 . 4 5 m a x 0 . 3 0 m i n 1 0 ' t y p 1 0 ' t y p g a u g e p l a n e 2 . 0 5 m a x 1 . 7 8 m i n 0 . 2 7 r e f www.datasheet.co.kr datasheet pdf - http://www..net/
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